Transphorm, Inc. (Nasdaq: TGAN), a prominent global leader in GaN (gallium nitride) technology, has announced the launch of a high-performance, low-cost driver solution for its SuperGaN FETs. The driver is specifically designed for low- to mid-power applications such as LED lighting, charging systems, microinverters, UPSes, and gaming computers. This development enhances Transphorm’s value proposition for customers operating in these segments of the $3 billion power market.
Compared to competing e-mode GaN solutions that necessitate custom drivers or complex level shifting circuitry with gate protection devices, Transphorm’s SuperGaN FETs offer easy drivability as they can be paired with off-the-shelf drivers. This feature provides customers with cost advantages when utilizing Transphorm devices. The newly introduced solution utilizes a high-speed, non-isolated, high-voltage half-bridge gate driver, which further reduces the overall system cost without compromising the performance of the GaN FET or the system.
Philip Zuk, Senior Vice President of Business Development and Marketing at Transphorm, highlighted the benefits of the normally-off GaN platform, stating, “The ability to use off-the-shelf drivers is a major advantage. It allows customers to select drivers based on varying degrees of performance benefits while maintaining control over the power system’s cost. This is particularly important for price-sensitive end markets.” With Transphorm’s high-performance devices, customers can optimize their bill of materials (BOM) and achieve the required performance in the most cost-effective manner.
Transphorm also recommends various other drivers that possess features such as high isolation voltage ratings for control-to-output drive signals, short propagation delay times, fast turn on/off times, and programmable deadtime. These drivers are well-suited for higher power applications.
The driver solution is particularly targeted at low- to mid-power applications like power adapters, gaming laptop chargers, LED lighting, and two- and three-wheeler chargers, where cost sensitivity is a crucial factor. Since the power systems in these products typically do not require advanced features like safety isolation, the use of premium drivers would unnecessarily increase the BOM cost.
Performance analysis of the half-bridge gate driver was conducted using Transphorm’s TP65H070LSG, a 650 V, 72 mΩ device in a PQFN88 package. The driver proved to be efficient at switching frequencies equal to or less than 150 kHz, regardless of the use of a heatsink or forced air cooling. In select configurations, the solution achieved close to 99 percent efficiency.
Transphorm’s latest driver solution is poised to provide cost-effective and high-performance options for customers in the power electronics industry, further establishing the company’s position as a leader in GaN technology.
