SemiQ Inc., a developer of high-performance silicon carbide (SiC) power semiconductor solutions, releases its new 1200V SiC MOSFET Six-Pack Modules. Designed to meet the growing demand for energy-efficient and compact power solutions, the new modules offer high power density and low switching losses, enabling cost-optimized system designs for large-scale industrial and automotive applications.
The modules utilize planar SiC MOSFET technology with rugged gate oxide and a reliable body diode, arranged in a three-phase bridge topology. Key design enhancements include split DC negative terminals, press-fit terminal connections, and a Kelvin source reference, which together ensure precise control and stable operation even under demanding conditions. These MOSFETs have been tested to withstand voltages exceeding 1350V and undergo 100% wafer-level burn-in (WLBI), reflecting SemiQ’s commitment to reliability and quality assurance.
Targeted applications include electric vehicle (EV) fast charging, renewable energy systems, energy storage, uninterruptible power supplies (UPS), induction heating, welding, and motor drives. The modules are rated for continuous operation at junction temperatures up to 175°C and are designed for easy heatsink mounting, simplifying thermal management in compact system designs.
The initial product lineup includes variants with 20, 40, and 80 milliohm on-resistance, offering power dissipation of 263W, 160W, and 103W respectively. Each module supports continuous drain currents of approximately 29 to 30 amps and pulsed currents up to 70 amps. Switching performance is marked by turn-on energies between 0.1 and 0.54 millijoules, turn-off energies from 0.02 to 0.11 millijoules, and total switching times ranging from 56 to 105 nanoseconds
With these new modules, SemiQ aims to support industries seeking higher efficiency, lower system costs, and compact designs, particularly as electrification and clean energy initiatives accelerate. The modules are now available for immediate global shipment.
