Samsung Electronics, a global leader in advanced memory technology, has announced a significant breakthrough in the dynamic random-access memory (DRAM) industry by unveiling the world’s first and highest-capacity 32-gigabit (Gb) DDR5 DRAM, utilizing 12 nanometer (nm)-class process technology. This milestone achievement follows Samsung’s commencement of mass production for its 12nm-class 16Gb DDR5 DRAM in May 2023, reaffirming the company’s position at the forefront of next-generation DRAM technology.
SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics, emphasized the pivotal role of this innovation in the era of Artificial Intelligence (AI) and big data, stating, “With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI and big data. We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology.”
Samsung’s journey in the DRAM industry has been marked by remarkable progress. Since its pioneering development of the first 64-kilobit (Kb) DRAM in 1983, the company has now achieved a 500,000-fold increase in DRAM capacity over the past four decades.
This latest memory product from Samsung leverages cutting-edge processes and technologies to enhance integration density and design optimization, resulting in the industry’s highest capacity for a single DRAM chip. It offers twice the capacity of 16Gb DDR5 DRAM within the same package size. Significantly, the new 32Gb DDR5 DRAM eliminates the need for the Through Silicon Via (TSV) process, which was previously essential for DDR5 128GB DRAM modules manufactured using 16Gb DRAM. This breakthrough not only simplifies production but also reduces power consumption by approximately 10%, making it an ideal solution for power-efficient environments, particularly data centers.
With the foundation of its 12nm-class 32Gb DDR5 DRAM, Samsung is poised to expand its lineup of high-capacity DRAM products to meet the demands of the computing and IT industry. These DRAM modules are set to serve data centers and customers requiring AI and next-generation computing applications. Additionally, this product will facilitate Samsung’s ongoing collaboration with key industry players.
Mass production of the new 12nm-class 32Gb DDR5 DRAM is slated to commence by the end of this year, reaffirming Samsung’s commitment to advancing memory technology and meeting the evolving needs of the tech industry.
