Power Integrations has introduced a cutting-edge technology, introducing the world’s highest-voltage, single-switch gallium-nitride (GaN) power supply IC with a 1250-volt PowiGaN switch. This development signifies a significant leap in high-voltage GaN technology, offering promising prospects for the power conversion industry.
The newly released InnoSwitch3-EP 1250 V ICs, part of Power Integrations’ InnoSwitch family, feature synchronous rectification, FluxLink safety-isolated feedback, and a range of switch options, including 725 V silicon, 1700 V silicon carbide, and PowiGaN in 750 V, 900 V, and 1250 V varieties.
This technology stands out due to the remarkably low switching losses of Power Integrations’ proprietary 1250 V PowiGaN technology, which are less than a third of equivalent silicon devices at the same voltage. This efficiency translates into power conversion rates as high as 93 percent, facilitating the development of highly compact flyback power supplies capable of delivering up to 85 W without the need for a heatsink.
Radu Barsan, Vice President of Technology at Power Integrations, highlighted the significance of this advancement. “Our ongoing development of higher voltage GaN technology extends the efficiency benefits of GaN to a wider range of applications, including many currently served by silicon-carbide technology,” Barsan stated.
Designers utilizing the InnoSwitch3-EP 1250 V ICs can specify an operating peak voltage of 1000 V, allowing for an industry-standard 80 percent de-rating from the 1250 V absolute maximum. This offers substantial headroom for industrial applications, enhancing robustness against grid instability, surges, and other power perturbations, especially in challenging power grid environments.
