NEO Semiconductor, a developer specializing in 3D NAND flash and DRAM memory technologies, has unveiled groundbreaking findings from its 3D X-DRAM simulations conducted through Technology CAD (TCAD). These simulations, essential for semiconductor manufacturers and engineers, showcased exceptional features of the 3D X-DRAM technology, including an operation voltage below 1 V, a write time at the cell level under 3 ns, a sensing margin surpassing 20 uA, data retention exceeding 100 ms, and an endurance capability surpassing an astounding 10^16 cycles.
Founder and CEO of NEO Semiconductor, Andy Hsu, underlined the pivotal role of TCAD tools in hastening product development. “Semiconductor manufacturers rely on TCAD tools to accelerate development and optimize products using virtual experiments rather than physical ones,” mentioned Hsu, an accomplished technology inventor holding over 120 U.S. patents. Hsu also highlighted the utility of these tools in showcasing the feasibility of integrating 3D X-DRAM technology into the market for 3D DRAM products.
The innovative 3D X-DRAM leverages Floating Body Cell (FBC) technology, employing a single transistor and no capacitors per data bit, simplifying its structure significantly. This simplicity reduces risks and costs, distinguishing 3D X-DRAM from other 3D DRAM alternatives. NEO Semiconductor estimates that 3D X-DRAM achieves an impressive 128 Gb density with 230 layers, marking a fourfold improvement over 2D DRAM.
According to Jay Kramer, President of Network Storage Advisors Inc., a new memory architecture with 3D DRAM technology stands as the future of memory, aiming to propel and expand DRAM to unprecedented levels. Kramer lauded NEO Semiconductor’s innovative design, projecting it to address enhanced performance, reduced power consumption, and a smaller footprint. Moreover, he highlighted the potential of this technology to pave the way for new applications in the marketplace.
