In a significant move to advance silicon carbide (SiC) power semiconductor technology, Mitsubishi Electric Corporation (TOKYO: 6503) has unveiled plans to join forces with Nexperia B.V. for a strategic partnership aimed at the joint development of SiC power semiconductors catered to the power electronics market.
Mitsubishi Electric, renowned for its prowess in wide-bandgap semiconductor technologies, will play a pivotal role in crafting and supplying SiC metal–oxide–semiconductor field-effect transistor (MOSFET) chips. Nexperia, a global player with a wealth of experience in designing, manufacturing, and ensuring the quality of discrete devices, will harness these chips to develop SiC discrete devices.
The backdrop for this collaboration is the burgeoning global electric vehicle market, a catalyst propelling the exponential growth of SiC power semiconductors. These semiconductors offer advantages such as reduced energy loss, heightened operating temperatures, and faster switching speeds when compared to traditional silicon power semiconductors. The heightened efficiency of SiC power semiconductors is poised to make a substantial contribution to global decarbonization and the ongoing green transformation.
Mitsubishi Electric has a storied legacy with leading positions in various applications, including high-speed trains, high-voltage industrial applications, and household appliances. Notably, the company introduced the world’s first SiC power modules for air conditioners in 2010 and achieved the milestone of being the primary supplier of an all-SiC power module for Shinkansen bullet trains in 2015. This extensive experience has solidified Mitsubishi Electric’s reputation for developing and manufacturing SiC power modules recognized for advanced performance and high reliability.
Looking ahead, Mitsubishi Electric envisions deepening its collaboration with Nexperia, a company with decades of experience in the design, manufacture, quality assurance, and supply of diverse discrete devices. Nexperia’s devices find application in automotive, industrial, mobile, and consumer markets, playing a role in advancing decarbonization efforts and promoting a more sustainable future. Mitsubishi Electric remains committed to refining the performance and quality of its SiC chips while concentrating on the development of power modules using proprietary technologies.
Mark Roeloffzen, Senior Vice President & General Manager of the Business Group Bipolar Discretes at Nexperia, commented on the collaboration, stating, “This mutually beneficial strategic partnership with Mitsubishi Electric represents a significant stride in Nexperia’s silicon carbide journey.” He highlighted Mitsubishi Electric’s strong track record and Nexperia’s commitment to high-quality standards, expressing confidence in generating positive synergies that will empower customers to deliver highly energy-efficient products across various sectors.
Masayoshi Takemi, Executive Officer and Group President, Semiconductor & Device at Mitsubishi Electric, expressed enthusiasm about the partnership, noting, “Nexperia is a leading company in the industrial sector with proven technologies for high-quality discrete semiconductors.” He emphasized the value of combining the semiconductor technologies of both companies through this co-development partnership.
