Micross Components, Inc. (Micross), a global provider of mission-critical microelectronic components, launches its latest innovation: the next-generation Nuclear Event Detector (NED). Replacing the legacy NED products, this advanced detector offers 4 times greater sensitivity and added functionality, revolutionizing nuclear event detection in critical applications.
Designed for high-reliability aerospace, defense, space, and industrial applications, the new Micross MYXRHNEDHCJ series NED features integrated differential drivers, enhancing noise immunity and offering 300% greater radiation dose sensitivity compared to legacy devices. Additionally, it boasts 25% faster response times, crucial for detecting nuclear events promptly and ensuring the safety of electronic systems.
Manufactured on US soil in the Jazz Semiconductor Trusted Foundry, Inc. (JSTF), a subsidiary of Tower Semiconductor NPB, the Micross NED is available screened to Class H Military flow or Class K Space flow. It eliminates the need for external shielding requirements on peripheral circuitry, reducing size, weight, and power consumption (SWaP).
John Santini, Chief Technology Officer at Micross Components, highlighted the significance of the next-generation NED, stating, “Micross’ next-generation NED enables faster, more compact, and reliable nuclear event detection capabilities, with improved SWaP, performance, and features.”
Key improvements include reductions in SWaP, 4 times lower minimum dose rate threshold, increased noise immunity, and sensitivity to nuclear events. The NED also offers various packaging options and features a vertically integrated in-house sourced PIN diode and ASIC, enhancing obsolescence mitigation and reliability.
Engineering samples are available 4-6 weeks after receipt of order (ARO), with a detailed datasheet downloadable from Micross’ NED page. The introduction of this next-gen NED marks a significant advancement in nuclear event detection, ensuring greater safety and security in critical electronic systems.
