Microchip Technology (Nasdaq: MCHP) has announced the completion of its family of radiation-hardened (rad-hard) power MOSFETs, meeting the MIL-PRF-19500/746 standard and achieving JANSF qualification for its JANSF2N8587U3 device at 300 Krad (Si) Total Ionizing Dose (TID). This development marks a significant milestone in the company’s ongoing commitment to providing high-reliability power solutions for aerospace, defense, and spaceflight applications.
The new JANSF2N8587U3 100V N-channel MOSFET joins Microchip’s existing JANS series, which ranges from 100 to 250 volts and supports up to 100 Krad TID. The latest 300 Krad device expands the company’s portfolio into higher Radiation Hardness Assurance (RHA) levels, making it suitable for use in extreme radiation environments such as deep space and Low Earth Orbit (LEO).
Microchip’s radiation-hardened MOSFETs are available in various packaging formats, including cost-effective plastic packages using JANSR-qualified die and hermetically sealed ceramic packages designed to withstand both total ionizing dose and single-event effects.
“These devices meet the most stringent specifications required for rad-hard MOSFETs,” said Leon Gross, Corporate Vice President of Microchip’s Discrete Products Group. “Our proprietary rad-hard by design technology ensures cost-effective, reliable solutions for our aerospace and defense customers.”
These power MOSFETs are engineered for use in power conversion applications such as point-of-load converters, DC-DC converters, motor drives, and general-purpose switching. With low RDS(ON) and minimal gate charge, they deliver high energy efficiency and improved switching performance.
Microchip’s broader aerospace and defense portfolio includes radiation-tolerant microcontrollers, FPGAs, Ethernet PHYs, RF components, and timing solutions. The company also supports development through simulation tools like Spice Models, enabling engineers to optimize design performance.
