Gallium Semiconductor, a renowned provider of GaN RF semiconductor solutions, has introduced its latest innovation, the GTH2e-2425300P ISM CW amplifier. This 2.4-2.5 GHz, 300W pre-matched discrete GaN-on-SiC High Electron Mobility Transistor (HEMT) is poised to deliver enhanced efficiency for a wide spectrum of Industrial, Scientific, and Medical (ISM) applications, notably semiconductor plasma sources and microwave plasma chemical vapor deposition (MPCVD) equipment utilized in synthetic diamond production.
Roger Williams, CEO of 3D RF Energy Corp, hailed the GTH2e-2425300P as a performance and design breakthrough, stating, “The GTH2e-2425300P sets a new standard for performance and ease-of-use in 2.45 GHz ISM solid-state power design.” Its internal matching simplifies PCB design for applications ranging from a 400 W narrowband design with 76% efficiency to a 300W design with 72-74% efficiency across the entire band. It excels in both class AB and class C operation, with 17dB of gain at saturated power, simplifying driver requirements.
Operating within the 2.4 to 2.5 GHz frequency range and powered by a 50 V supply rail, the GTH2e-2425300P redefines RF power capabilities with its remarkable efficiency ratings. It achieves a peak efficiency of 76% under pulsed conditions (100 µs, 10% duty cycle) and maintains a drain efficiency of over 72% during continuous wave operation. Qualified customers can request a fixed tune demonstration board.
Angelo Andres, Director of Product Marketing for Multi-Markets at Gallium Semiconductor, emphasized the company’s commitment to optimizing performance for ISM applications and providing long-term product availability and support. He said, “The GTH2e-2425300P signifies an evolution in RF power amplification.” Gallium Semiconductor aims to further strengthen its ISM market portfolio to better serve its customers.
The GTH2e-2425300P comes encased in an ACP-800 4L Air Cavity Plastic package, offering exceptional reliability and thermal performance (0.67 °C/W) with its Super-CMC (ceramic matrix composite) flange. This packaging simplifies integration into various systems, streamlining the development process for RF engineers.
Gallium Semiconductor will also be present at European Microwave Week in Berlin from September 19 to 21, showcasing the GTH2e-2425300P along with three new 250 W L- and S-Band radar products and a new DC to 12 GHz general-purpose broadband amplifier. This event provides an opportunity to learn more about Gallium Semiconductor’s RF GaN solutions.
