Mitsubishi Electric Corporation (TOKYO: 6503) has announced the forthcoming release of six new J3-Series power semiconductor modules designed for electric vehicles (xEVs). These modules, set to be available for sample shipments from March 25, feature silicon carbide metal-oxide semiconductor field-effect transistor (SiC-MOSFET) or RC-IGBT (Si) technology. The compact designs and scalability of the modules are tailored for integration into the inverters of electric vehicles and plug-in hybrid electric vehicles (PHEVs).
The announcement coincides with the 38th Electronics R&D, Manufacturing and Packaging Technology Expo (NEPCON JAPAN 2024), taking place from January 24 to 26 at Tokyo Big Sight, Japan. Mitsubishi Electric plans to showcase the J3-Series at other exhibitions worldwide, including events in North America, Europe, China, and other regions.
In response to the growing demand for power semiconductors capable of efficiently converting electricity, Mitsubishi Electric’s SiC power semiconductors in the J3-Series promise reduced power loss, aligning with the industry’s focus on enhanced energy efficiency.
The xEV sector, encompassing electric vehicles and plug-in hybrids, relies on power semiconductor modules for crucial functions like inverters that drive xEV motors. Mitsubishi Electric aims to address the industry’s evolving needs by extending the cruising range of xEVs and facilitating the downsizing of batteries and inverters.
Recognizing the stringent safety standards governing the electric vehicle sector, Mitsubishi Electric emphasizes the reliability of the power semiconductors used in drive motors, surpassing general industrial application standards.
The development of these SiC products received support from Japan’s New Energy and Industrial Technology Development Organization (NEDO), emphasizing collaborative efforts to advance innovation and sustainability in the electric vehicle industry.
