In a move that promises to revolutionize the industrial equipment sector, Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has officially launched its highly anticipated “TRSxxx65H series.” This cutting-edge line represents the company’s third and most advanced generation of silicon carbide (SiC) Schottky barrier diodes (SBDs). The new diodes, designed specifically for industrial applications, are set to contribute to the development of more efficient equipment across various sectors.
Toshiba’s latest release boasts a range of groundbreaking features that set it apart from previous iterations. The “TRSxxx65H series” harnesses a third-generation SiC SBD chip with an optimized junction barrier Schottky (JBS) structure, surpassing the capabilities of its second-generation counterparts. Most notably, the new diodes achieve an industry-leading low forward voltage of just 1.2V (Typ.), marking a remarkable 17% reduction from the previous generation’s 1.45V (Typ.). This advancement in voltage efficiency significantly minimizes power dissipation, resulting in higher overall equipment efficiency.
The initial rollout of the “TRSxxx65H series” includes twelve products, all operating at 650V. Among them, seven products are encased in TO-220-2L packages, while the remaining five are housed in DFN8×8 packages. Toshiba aims to commence volume shipments of these highly anticipated diodes immediately, signaling the company’s commitment to meeting market demands and promoting technological progress.
Various industries are expected to benefit from the exceptional performance of Toshiba’s SiC SBDs. The applications range from switching power supplies to electric vehicle (EV) charging stations and photovoltaic inverters. By leveraging the enhanced trade-offs between forward voltage and total capacitive charge, as well as forward voltage and reverse current, industrial equipment manufacturers can achieve heightened power efficiency and improved performance across their product lines.
In addition to the industry-leading low forward voltage, the “TRSxxx65H series” also boasts a low reverse current rating of TRS6E65H IR＝1.1μA (Typ.) at VR=650V. Furthermore, these diodes exhibit a low total capacitive charge of TRS6E65H QC＝17nC (Typ.) at VR=400V and f=1MHz, cementing their position as state-of-the-art components for high-efficiency applications.
The launch of Toshiba’s third-generation SiC Schottky barrier diodes marks a significant milestone in the field of industrial equipment. With these innovative products, Toshiba is pioneering the way towards a more energy-efficient future across multiple industries. As the demand for greener and more sustainable technology continues to grow, the “TRSxxx65H series” promises to play a vital role in meeting those requirements, propelling industrial equipment efficiency to new heights.
