Toshiba Electronic Devices & Storage Corporation has introduced the latest additions to its DTMOSVI series – the DTMOSVI(HSD) power MOSFETs. Specifically designed for switching power supplies in applications like data centers and photovoltaic power conditioners, the first two products, “TK042N65Z5” and “TK095N65Z5,” offer advanced features in a TO-247 package.
The incorporation of high-speed diodes significantly improves reverse recovery characteristics, reducing reverse recovery time (trr) by 65% and reverse recovery charge (Qrr) by 88%. The innovative DTMOSVI(HSD) process lowers drain cut-off current at high temperatures and reduces the figure of merit “drain-source On-resistance × gate-drain charges,” resulting in increased efficiency and reduced power loss.
Toshiba plans to expand the DTMOSVI(HSD) line-up to include devices in TO-220, TO-220SIS, TOLL, and DFN 8×8 packages, contributing to enhanced energy-saving equipment.
