Toshiba Electronic Devices & Storage Corporation has unveiled its latest offering, the “SSM10N961L,” a 30V N-channel common-drain MOSFET designed to cater to devices with USB requirements and safeguard battery packs. The product is set to hit the market immediately.
Traditionally, Toshiba’s range of N-channel common-drain MOSFETs centered around 12V products, primarily used in safeguarding lithium-ion battery packs in smartphones. The introduction of the 30V variant now extends the applications to devices necessitating voltages above 12V. This includes load switching for USB charging devices’ power lines and the protection of lithium-ion battery packs in laptop PCs and tablets.
Creating a bi-directional switch with low drain-source on-resistance (RDS(ON)) usually demanded two MOSFETs, either 3.3×3.3mm or 2×2 mm, with low RDS(ON). Toshiba’s new product utilizes the compact TCSPAG-341501 package (3.37mm×1.47mm (typ.), t=0.11mm (typ.)) and boasts low source-source on-resistance (RSS(ON)) of 9.9mΩ (typ.) in a single package common-drain configuration.
For devices requiring high power supply, USB Power Delivery (USB PD) technology supports a power range from 15W (5V / 3A) to a maximum of 240W (48V / 5A). USB PD mandates a role swap function and bi-directional power supply support for devices with USB charging capabilities. Toshiba’s new product fits these requirements, enabling both power supply and reception in a small mounting area.
Additionally, when combined with a driver IC from Toshiba’s TCK42xG series, this MOSFET can create a load switching circuit with a backflow prevention function or a power multiplexer circuit capable of switching between Make-Before-Break (MBB) and Break-Before-Make (BBM) operations. Toshiba has released a reference design for a power multiplexer circuit employing common-drain MOSFETs. Utilizing this design is expected to streamline product development by reducing design times.
