A leader in GaN power ICs, Navitas Semiconductor (NASDAQ: NVTS) makes its high-power GaN power ICs samples available for the first time to data centers, solar and EV customers worldwide.
The ICs were first introduced to mobile customers three years ago and today enables unprecedented high-efficiency and ultra-fast charging of mobile devices with unprecedented high-efficiency and ultra-fast charging of mobile devices with ultra-lightweight and miniaturized form factors.
This technology, the only GaN semiconductor platform to monolithically integrate drive, control, protection and power, is now available to applications that operate in the 2kW to 20kW power range, which includes data centers, solar inverters and EV power electronics. This is a foundational shift from legacy silicon to next-gen GaN semiconductors to ‘Electrify Our World’ and transition from fossil fuels to clean electric applications and impact up to 2.6Gyons/year of CO2 emissions by 2050.
GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power, 40% energy savings and 3x faster charging in half the size and weight. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. The new products are optimized for each of the high-power markets, with feature, function and power upgrades to become true GaNFast application-specific integrated circuits.
“The Navitas Engineering teams have delivered on-time again, with high-performance GaN power ICs that drive our market expansions,” said Gene Sheridan, co-founder and CEO. “This is another successful step along the path we outlined in our financial roadmap to investors, expanding from our #1 position in the 20W to 300W mobile fast charger market, into high-power 2kW to 20kW-plus applications.”
Navitas’ new products are power-upgraded, thermally-enhanced versions of the proven 650/800V GaNFast platform.
