Transphorm, Inc. (OTCQX: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today it shipped more than one million SuperGaN Gen IV FETs in December 2021. The milestone confirms the company’s previously stated ability to meet high volume capacity of qualified packaged devices and its growing market share. It also marks a more than 3x increase in units shipped in the 2nd half of CY2021 over 1st half of CY2021. Notably, highlighting Transphorm’s continued ecosystem expansion, the shipped FETs are for use in 45 W to 300 W power adapter and fast charger applications manufactured by new and existing customers in APAC.
Transphorm’s SuperGaN product family for compact power conversion applications currently includes three 650 V devices: 480 mΩ FETs, 300 mΩ FETs, and 150 mΩ FETs. These devices are offered in standard PQFN 5×6 and 8×8 packages and meet JEDEC qualification standards at 150°C.
Key advantages of the SuperGaN devices when compared to alternative GaN semiconductors (i.e., e-mode and IC GaN) include:
- Superior performance in a smaller die size: Data shows that the SuperGaN platform delivers higher efficiency versus lower on-resistance devices.
- Ease of designability and drivability: The SuperGaN platform’s patented architecture includes an integrated silicon FET with a universal interface and does not require excessive amounts of peripheral circuitry. This interface allows for the use of popular, off-the-shelf controllers with integrated drivers; a requirement for high efficiency power adapter topologies such as the QRF (Quasi Resonant Flyback) and ACF (Active Clamp Flyback).
- Best-in-class Quality + Reliability: Based on over 30 billion hours of operation, Transphorm devices in the field yield a FIT (failure in time) rate of < 0.3; meaning less than 0.3 failures statistically over one billion operating field hours.
“We’re thrilled to have partnered with our suppliers and customers to hit our targeted volume manufacturing goal of one million units per month. It demonstrates our rising market share in the rapidly growing fast charger and power adapter segment as well as our ability to reproduce high performance, high reliability GaN devices at scale,” said Primit Parikh, President and Co-Founder, Transphorm. “Transphorm’s traction in both lower power and multi-kilowatt high power applications underscores the leadership of our technology. This, combined with recent capital raises of more than $45 million last quarter, supports strong, positive momentum for our continued expansion and growth in 2022.”
Transphorm’s complete product portfolio currently includes 650 V and 900 V devices in various packages. The portfolio’s technological advantages are largely driven by the company’s vertical integration. Uncommon in the GaN semiconductor industry, this operation model allows Transphorm to control its devices’ design, epitaxial wafer (starting material), and manufacturing process. As a result, Transphorm today supports the largest range of power conversion requirements (45 W to 10+ kW) across the widest range of power applications (power adapters, datacenter and gaming PSUs, crypto mining rigs, automotive converters, inverters for renewables, and others).
