The Industrial Technology Research Institute (ITRI) and Taiwan Semiconductor Manufacturing Company (TSMC) have joined forces to pioneer research on the development of a spin-orbit-torque magnetic random-access memory (SOT-MRAM) array chip. This chip features an innovative computing in memory architecture and is notable for its power consumption, which is merely one percent of a spin-transfer torque magnetic random-access memory (STT-MRAM) product.
The collaborative efforts of ITRI and TSMC have yielded a research paper on this microelectronic component, jointly presented at the 2023 IEEE International Electron Devices Meeting (IEDM 2023). The paper highlights the cutting-edge nature of their findings and the significant role they play in advancing next-generation memory technologies.
Dr. Shih-Chieh Chang, General Director of Electronic and Optoelectronic System Research Laboratories at ITRI, underscored the achievements resulting from the collaboration. “Following the co-authored papers presented at the Symposium on VLSI Technology and Circuits last year, we have further co-developed a SOT-MRAM unit cell,” said Dr. Chang. “This unit cell achieves simultaneous low power consumption and high-speed operation, reaching speeds as rapid as 10 nanoseconds. Its overall computing performance can be further enhanced when integrated with computing in memory circuit design. Looking ahead, this technology holds the potential for applications in high-performance computing (HPC), artificial intelligence (AI), automotive chips, and more.”
The advent of AI, 5G, and AIoT has spurred demand for rapid processing, prompting the need for new memory solutions characterized by enhanced speed, stability, and energy efficiency. The collaborative success of ITRI and TSMC not only contributes to the evolution of next-generation memory technology but also enhances Taiwan’s international competitive standing in the semiconductor sector.
