The provider of semiconductor, microelectronics and IoT solutions, Infineon Technologies partners with Winbond Electronics Corporation, a supplier of semiconductor memory solutions. The collaboration is to expand their HYPERRAM product with the new higher bandwidth HYPERRAM 3.0.
Offering compact alternatives to traditional pseudo-SRAM, HYPERRAM product range is a well-suited to low power, space-constrained IoT applications that require an off-chip external RAM. HYPERRAM 3.0 operates at a maximum frequency of 200MHx with a 1.8V operation voltage, which is the same as both HYPERRAM 2.0 and OCTAL xSPI RAM, but with an increased data-transfer rate of 800MBps – double the rate that was previously available. The new generation HYPERRAM operates via an expanded IO HyperBus interface with 22 pins.
“As a leading provider of memory solutions, Infineon provides a family of solutions that deliver high performance in smaller form factors for next-generation IoT applications,” said Ramesh Chettuvetty, Sr. Director of Marketing and Applications at Infineon Technologies. “HYPERRAM 3.0 is the third generation of the HYPERRAM family that supports throughput of up to 800MBps using a new 16-bit extended version of the HyperBus interface. The 256Mb HYPERRAM 3.0 devices are now sampling. Infineon Technologies is pleased to collaborate with Winbond to enable broader adoption of this new memory technology.”
“Low pin count, low power consumption and easy control are three key features of HYPERRAM™ that help it significantly improve the performance of IoT end devices,” says Winbond. “HYPERRAM significantly simplifies the PCB layout design, extends mobile devices’ battery life, and works with a smaller processer via a lower pin count while increasing throughput compared to low-power DRAM, SDRAM, and CRAM/PSRAM,” Winbond added.
