SK hynix Inc. becomes the first in the industry to successfully develop the High Bandwidth Memory 3 (HBM3) Dynamic Random Access Memory chips (DRAM).
The fourth generation of the HBM technology with a combination of multiple DRAM chips vertically connected, HBM3 is a high value product that raises the data processing rate. Apart from being the fastest DRAM in the world, HBM3 comes with the biggest capacity and significantly improved level of quality.
The product can process up to 819GB per second, meaning that 163 FHD (full-HD) movies (5GB each) can be transmitted in a single second. This represents a 78% increase in the data-processing speed compared with the HBM2E.
It also corrects data (bit) errors with the help of the built-in on-die error-correction code, significantly improving the reliability of the product.
SK hynix’s HBM3 will be provided in two capacity types of 24GB – the industry’s biggest — and 16GB. For the 24GB product, SK hynix engineers ground the height of a DRAM chip to approximately 30 micrometer (μm, 10-6m), equivalent to a third of an A4 paper’s thickness, before vertically stacking 12 chips using the through silicon via technology.
HBM3 is expected to be mainly adopted by high-performance data centers as well as machine learning platforms that enhance the level of artificial intelligence and supercomputing performance used to conduct climate change analysis and drug development.
“Since its launch of the world’s first HBM DRAM, SK hynix has succeeded in developing the industry’s first HBM3 after leading the HBM2E market,” said Seon-yong Cha, Executive Vice President in charge of the DRAM development. “We will continue our efforts to solidify our leadership in the premium memory market and help boost the values of our customers by providing products that are in line with the ESG management standards.”
This new product will consolidate the company’s leadership in the market. SK Hynix also was the first in the industry to start mass production of HBM2E.
