Magnachip Semiconductor Corporation (NYSE: MX) announces the development of 1200V 75A Insulated Gate Bipolar Transistor (IGBT) in a T)-247PLUS package. It is exclusively designed for solar inverters and plans to start mass production in October this year.
Having entered the solar inverter market in 2020, Magnachip first introduced the 1200V 40A IGBT (MBQ40T120QFS) and began offering the 650V 75A IGBT (MBQ75T65PEH) in 2022. Two years from then, the company unveils its latest 1200V 75A IGBT (MBQA75T120RFS). Packaged in a TO-247PLUS with a wide heat spreader, this product improves heat dissipation as compared to the TO-247 package. It further enhances power efficiency by reducing conduction loss by over 14% compared to its previous generation and ensures stable operation even in overload conditions.
This new IGBT product provides application design flexibility, as its performance can replace that of two 40A IGBTs. Another notable feature is the incorporation of a fast recovery anti-parallel diode, which quickly removes residual current to reduce switching losses and guarantees a maximum operating junction temperature of 175°C. Designed in accordance with the standards of the Joint Electron Device Engineering Council (JEDEC), this product is suitable for a wide range of applications requiring strict power ratings and high efficiency, including solar inverters, converters, uninterruptible power supply systems, and general-purpose inverters.
“With this new product launch, Magnachip’s solar energy power product lineup has been further strengthened and now boasts high-performance IGBTs and MXT MV MOSFETs that satisfy the technical requirements of applications in the solar energy market,” said YJ Kim, CEO of Magnachip. “We will continue to supply innovative power solutions targeting renewable energy applications and capitalize on growth opportunities within the industry.”
