Innoscience Technology has unveiled the INV100FQ030A, a pioneering 100V bi-directional GaN IC, marking a significant step forward in power solutions. This innovation aims to enhance efficiency and energy savings across diverse applications.
The INV100FQ030A distinguishes itself by replacing two silicon MOSFETs with a single VGaN IC, resulting in reduced on-resistance and losses. This development holds particular relevance for optimizing 48V or 60V battery management systems.
Its applications encompass a broad spectrum, including battery management systems and high-side load switches, making it suitable for bidirectional converters, switching circuits, and load switches in power systems. Its versatility extends to consumer electronics like home batteries, e-scooters, and more.
The INV100FQ030A’s technical specifications include a low gate charge of 90nC, ultra-low dynamic on-resistance of 3.2mΩ, and a compact design in a 4x6mm package.
Dr. Denis Marcon, General Manager at Innoscience Europe, underlines the company’s commitment to continuous innovation and core technology development. He anticipates that the INV100FQ030A will expedite system miniaturization, contributing to increased efficiency and energy savings.
A noteworthy development is the commencement of mass production for the INV100FQ030A, available in En-FCQFN (exposed top side cooling) and FCQFN packaging. This swift transition to mass production underscores the readiness and industry impact of this GaN IC.
