Teledyne e2v HiRel has unveiled an extension to its collection of high reliability gallium nitride high electron mobility transistors (GaN HEMTs) with the introduction of new space-screened versions. The latest additions, featuring 100 V, 90 A, and 650 V, 30 A GaN HEMTs, have been developed to serve diverse aerospace applications.
Labelled as TDG650E30BSP, TDG100E90BSP, and TDG100E90TSP, these devices undergo rigorous NASA Level 1 or ESA Class 1 screening processes. They also offer the flexibility of attaining full Level 1 conformance through supplementary qualification testing if desired. Notably, these components find typical use in battery management, DC-DC converters, and space motor drives.
The new releases include two variants of 100 V devices, each equipped with both bottom-side and top-side cooled packaging. Additionally, a 650 V, 30 A GaN-on-Silicon power transistor is available in a bottom-side cooled package. Customers have the choice between EAR99 or European sourcing for each device.
Teledyne e2v HiRel’s GaN HEMTs are designed with single wafer lot traceability and boast extended temperature performance from -55 to +125°C. Featuring low inductance and low thermal resistance packaging, these devices prioritize durability and efficiency.
Mont Taylor, VP of Business Development for Teledyne e2v HiRel, emphasized the significance of these additions, stating, “Our expanded portfolio provides additional options, delivering GaN HEMT products that save customers time and money without the need for additional screening.”
With gallium nitride devices already revolutionizing power conversion across various industries, these space-screened GaN HEMTs further expand their application. Teledyne e2v HiRel aims to offer enhanced efficiency, reduced size, and power-density benefits vital for aerospace and defense power applications.
The new GaN HEMTs are available for immediate purchase through Teledyne e2v HiRel or authorized distributors.
