ROHM Co., Ltd. and Toshiba Electronic Devices & Storage Corporation have sealed an agreement to collaborate on manufacturing power devices, marking a crucial step towards securing Japan’s semiconductor supply. The Ministry of Economy, Trade, and Industry has acknowledged and pledged support for this initiative in alignment with the Japanese Government’s commitment to ensuring a stable semiconductor supply.
The collaboration entails substantial investments by both companies in silicon carbide (SiC) and silicon (Si) power devices. This strategic move aims to bolster their production capabilities significantly. Additionally, they plan to leverage each other’s production capacities to optimize output.
Power devices serve as fundamental components in managing and supplying power across various electronic devices, playing a pivotal role in advancing towards a carbon-neutral society. With a continuously growing demand, these devices are critical in automotive and industrial applications, driving the development of more efficient electric powertrains and supporting increased automation and efficiency requirements.
ROHM has articulated its management vision focused on power and analog solutions, aiming to address energy-saving and product miniaturization needs while contributing to societal challenges. Their emphasis on SiC power devices aligns with the goal of energy conservation. Notably, ROHM’s latest 4th Generation SiC MOSFETs are slated for adoption in numerous electric vehicles and industrial equipment, illustrating their commitment to sustainable innovation.
Toshiba Electronic Devices & Storage, adhering to its long-standing commitment towards people and the future, is accelerating efforts toward carbon neutrality and a circular economy. With decades of experience in supplying Si power devices, especially in automotive and industrial sectors, Toshiba is expanding its production capacities and broadening its SiC power device lineup, particularly targeting automotive and power transmission applications.
Despite ROHM’s recent participation in Toshiba’s privatization, the collaboration between the two giants had been under consideration for a while, independent of this investment. Their joint application stems from a strategic evaluation amid the intensifying global semiconductor competition.
The collaboration involves extensive investments in SiC and Si power devices by both parties, aiming to enhance their global competitiveness while contributing to fortifying Japan’s semiconductor supply chains. The plan outlines substantial investments totaling JPY388.3 billion, with a maximum subsidy of JPY129.4 billion, representing one-third of the total investment amount.
Production sites for SiC power devices and SiC wafers will include LAPIS Semiconductor Miyazaki Plant No.2, while Si power devices will be produced at Kaga Toshiba. This collaboration signals a concerted effort towards reinforcing Japan’s semiconductor production capabilities in SiC and Si power devices, positioning both companies as key players in the industry’s global landscape.
