Mitsubishi Electric Corporation (6503.T) has announced its upcoming shipment of samples for the NX-type full-SiC (silicon carbide) power semiconductor module designed for industrial equipment. The samples are set to be available from June 14. This module, equipped with a second-generation SiC chip and reduced internal inductance, aims to enhance the efficiency, size, and weight of industrial machinery. The increasing use of power semiconductors for more efficient power conversion and reduced carbon footprint has raised expectations, particularly for SiC power semiconductors known for their ability to significantly minimize power loss. As a result, there is a growing demand for high-power, high-efficiency power semiconductors, such as those used in industrial equipment inverters.
Mitsubishi Electric has been developing power semiconductor modules incorporating SiC chips since 2010. The new module, featuring an optimized electrode structure and a low-loss SiC chip, achieves a remarkable 47% reduction in internal inductance compared to its predecessor. This reduction leads to minimized power loss and voltage surges, enabling fast switching and improved efficiency. With the inclusion of second-generation SiC chips utilizing junction field-effect transistor (JFET) doping technology, the module achieves approximately 72% less power loss compared to the previous version. This advancement significantly contributes to the overall efficiency of industrial equipment while reducing heat generation, allowing for the use of smaller and lighter coolers.
The development of this SiC product has received support from Japan’s New Energy and Industrial Technology Development Organization (NEDO).
The product boasts several key features. The optimized electrode structure, including laminated electrodes, achieves an internal inductance of 9nH, which is 47% lower than the previous module. By reducing internal inductance, the module effectively suppresses voltage surges and protects equipment, while also enabling fast switching and lower power loss. The low-loss second-generation SiC chip, incorporating JFET doping technology, reduces power loss by approximately 72% compared to the previous module, resulting in improved efficiency. The reduced power loss also minimizes heat generation, allowing for the use of smaller and lighter coolers.
Furthermore, the new module retains compatibility in terms of external dimensions and pin configurations with the existing NX-type package, making it easy to replace the current version and speeding up the design process for new equipment.
Mitsubishi Electric plans to expand its lineup of power semiconductor modules to further contribute to the efficiency, size, and weight improvements of industrial equipment.
The main specifications of the FMF600DXE-34BN module include a voltage rating of 1700V, current rating of 600A, isolation voltage of 4000Vrms, and a compact size of 62×152×17mm (W×D×H). Sample shipments of the NX-type full-SiC power semiconductor module are scheduled to begin on June 14, 2023. In terms of environmental compliance, the module is fully compliant with the RoHS directive 2011/65/EU and 2015/863/E.
